1V to 16V, Single-Channel, Hot-Swap Controllers
with Precision Current-Sensing Output
ABSOLUTE MAXIMUM RATINGS
PWR, SENSE, IN, FCOMP, SCOMP,
GATE, SOURCE, CALSENSE to GND ...............-0.3V to +28V
PG, CAL, BIAS, UV, OV, FAULT , CSOUT to GND ..-0.3V to +6V
REG to GND ............................................................-0.3V to +4V
GATE to SOURCE ...................................................-0.3V to +6V
IN to FCOMP, IN to SCOMP, IN to SENSE,
IN to CALSENSE ..................................................-0.3V to +1V
GND to AGND ......................................................-0.3V to +0.3V
FAULT , PG Current ........................................... -1mA to +50mA
GATE, SOURCE, GND Current ........................................750mA
Input/Output Current (all other pins) ..................................20mA
Continuous Power Dissipation (T A = +70 N C)
20-Pin TQFN, Single-Layer Board
20-Pin TQFN, Multilayer Board
(derate 25.6mW/ N C above +70 N C)..........................2051.3mW
Junction-to-Ambient Thermal Resistance (Note 1)
B JA , Single-Layer Board ........................................... +59 N C/W
B JA , Multilayer Board ................................................ +39 N C/W
Junction-to-Case Thermal Resistance (Note 1)
B JC , Single-Layer and Multilayer Board...................... +6 N C/W
Operating Temperature Range .......................... -40 N C to +85 N C
Junction Temperature .....................................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Soldering Temperature (reflow) ......................................+260 N C
(derate 16.9mW/ N C above +70 N C)..........................1355.9mW
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V PWR = V IN = 12V, R SENSE = 4m I , R FCOMP = R SCOMP = 2k I , R GATE = 1k I , C GATE = 330nF, C REG = 1 F F, unless otherwise noted.
Typical Values at V PWR = V IN = 3.3V, T A = +25 N C, unless otherwise noted.) (Note 2)
PARAMETER
Operating Voltage Range
Undervoltage Lockout
SYMBOL
V PWR
V UVLO
CONDITIONS
Minimum rising voltage on PWR
MIN
2.7
TYP
3.3
MAX
16
2.69
UNITS
V
V
Undervoltage-Lockout Hysteresis
V UVLOHYS
100
mV
Supply Current
I PWR
0.734
4
mA
Internal LDO Output Voltage
V REG
2.7V < V PWR < 16V, 0 to 1mA
2.49
2.6
V
CURRENT-MONITORING FUNCTION
IN Input Range
SCOMP Input Range
FCOMP Input Range
IN Input Current
SENSE Input Current
Common-mode range
V IN = V SENSE = 1V to 16V
1
1
1
135
6
16
16
16
V
V
V
F A
F A
Circuit-Breaker Current (Slow
Comparator)
Circuit-Breaker Current (Fast
Comparator)
Slow Current-Limit Threshold
Error
Fast Current-Limit Threshold Error
Slow-Comparator Response Time
Fast-Comparator Response Time
I SCOMP
I FCOMP
t SCD
t FSD
V SCOMP = 1V to 16V
V FCOMP = 1V to 16V
V SENSE - V SCOMP = 50mV
V SENSE - V FCOMP = 100mV
1mV overdrive
50mV overdrive
10mV overdrive, from overload condition,
V PWR = 12V
24.0
48.1
-2.0
-2.2
25
50
1
130
200
26.0
51.4
+2.1
+1.4
F A
F A
mV
mV
ms
F s
ns
2
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